PL PEAK

460 nm

Medium: vacuum-deposited film; DABNA-1 1 wt% in mCBP

Host: mCBP

Temperature: 298 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2779, Table 1

PL FWHM

30 nm

Medium: vacuum-deposited film; DABNA-1 1 wt% in mCBP

Host: mCBP

Temperature: 298 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2779, Table 1

PLQY

88%

Medium: vacuum-deposited film; DABNA-1 1 wt% in mCBP

Host: mCBP

Temperature: 300 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2780, Table 2

TAU DELAYED PL

93.7 μs

Medium: vacuum-deposited film; DABNA-1 1 wt% in mCBP

Host: mCBP

Temperature: 300 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2780, Table 2

HOMO (Kohn–Sham orbital energy)

-4.74 eV

Method: DFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · Main Figure 2 (p. 2778); SI Figure S₂ (p. S-8)

Kohn–Sham orbital eigenvalue, not measured oxidation potential or electron affinity.

LUMO (Kohn–Sham orbital energy)

-1.08 eV

Method: DFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · Main Figure 2 (p. 2778); SI Figure S₂ (p. S-8)

Kohn–Sham orbital eigenvalue, not measured oxidation potential or electron affinity.

TRANSITION WAVELENGTH

395.71 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

3.1332 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0.2047 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION WAVELENGTH

469.72 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.6395 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Published f=0.0000 is rounded at reported precision; not independently proven exactly zero.

TRANSITION WAVELENGTH

427.99 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.8969 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0.1388 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION WAVELENGTH

493.8 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.5108 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Published f=0.0000 is rounded at reported precision; not independently proven exactly zero.

Device: DABNA-1 OLED, 1 wt% doped in mCBP

Host: mCBP

Dopant: 1 wt%

Evidence: SRC-HATAKEYAMA-2016

Limitation: Specific 1 wt% OLED device, not intrinsic material performance; no device LT80/LT50 reported; see main p. 2780 and SI S-21.

PL PEAK

469 nm

Medium: vacuum-deposited film; DABNA-2 1 wt% in mCBP

Host: mCBP

Temperature: 298 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2779, Table 1

PL FWHM

28 nm

Medium: vacuum-deposited film; DABNA-2 1 wt% in mCBP

Host: mCBP

Temperature: 298 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2779, Table 1

PLQY

89.7%

Medium: vacuum-deposited film; DABNA-2 1 wt% in mCBP

Host: mCBP

Temperature: 300 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2780, Table 2

TAU DELAYED PL

65.3 μs

Medium: vacuum-deposited film; DABNA-2 1 wt% in mCBP

Host: mCBP

Temperature: 300 K

Doping: 1 wt% (emitter in host)

Evidence: SRC-HATAKEYAMA-2016 · Main article p. 2780, Table 2

HOMO (Kohn–Sham orbital energy)

-4.69 eV

Method: DFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · Main Figure 2 (p. 2778); SI Figure S₂ (p. S-8)

Kohn–Sham orbital eigenvalue, not measured oxidation potential or electron affinity.

LUMO (Kohn–Sham orbital energy)

-1.21 eV

Method: DFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · Main Figure 2 (p. 2778); SI Figure S₂ (p. S-8)

Kohn–Sham orbital eigenvalue, not measured oxidation potential or electron affinity.

TRANSITION WAVELENGTH

416.75 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.975 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0.4149 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION WAVELENGTH

484.8 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.5574 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S0; geometry: S0

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Published f=0.0000 is rounded at reported precision; not independently proven exactly zero.

TRANSITION WAVELENGTH

460.05 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.695 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0.2466 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: S1; geometry: S1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION WAVELENGTH

515.04 nm

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

TRANSITION ENERGY

2.4073 eV

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Source-reported gas-phase model output, not measured experimental value. Compare across methods/geometries only with explicit caveats.

OSCILLATOR STRENGTH

0 dimensionless

Method: TDDFT · CALC-HATAKEYAMA2016-B3LYP-631Gd-GAS-01

State: T1; geometry: T1

Evidence: SRC-HATAKEYAMA-2016 · SI Table S₁ (p. S-7)

Published f=0.0000 is rounded at reported precision; not independently proven exactly zero.

Device: DABNA-2 OLED, 1 wt% doped in mCBP

Host: mCBP

Dopant: 1 wt%

Evidence: SRC-HATAKEYAMA-2016

Limitation: Specific 1 wt% OLED device, not intrinsic material performance; no device LT80/LT50 reported; see main p. 2780 and SI S-21.

PLQY

75%

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, ΦPL^a; N2-saturated toluene 10^-5 mol L^-1

TAU PROMPT PL

5 ns

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τp^a

TAU DELAYED PL

11 μs

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τd^a

PLQY

82%

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1 ΦPL^c; SI p.24 (PDF page25), Supplementary Table 2

TAU PROMPT PL

17.4 ns

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τp (15 wt%, 100 nm)

TAU DELAYED PL

13.3 μs

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τd (15 wt%, 100 nm)

PL PEAK

479 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated λmax

PL FWHM

67 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated FWHM

Device: Source-reported blue TADF OLED using 5CzBN as emitter; device-specific performance from main Table 2 and 1000 cd/m² operating context

Host: Not reported

Dopant: Not reported

Evidence: SRC-HUANG-2024-NATPHOT

Limitation: Specific architecture and initial operating conditions required for device EQE/lifetime; values are NOT intrinsic photophysical material properties. Device EQEmax @unknown brightness, EQE @1000 cd/m², LT80 @initial1000 cd/m² are different metrics. No statement of industrial readiness from this comparison alone.

PLQY

88%

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, ΦPL^a; N2-saturated toluene 10^-5 mol L^-1

TAU PROMPT PL

5.2 ns

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τp^a

TAU DELAYED PL

11.4 μs

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τd^a

PLQY

87%

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1 ΦPL^c; SI p.24 (PDF page25), Supplementary Table 2

TAU PROMPT PL

28.8 ns

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τp (15 wt%, 100 nm)

TAU DELAYED PL

14.5 μs

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τd (15 wt%, 100 nm)

PL PEAK

476 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated λmax

PL FWHM

65 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated FWHM

Device: Source-reported blue TADF OLED using D-5CzBN as emitter; device-specific performance from main Table 2 and 1000 cd/m² operating context

Host: Not reported

Dopant: Not reported

Evidence: SRC-HUANG-2024-NATPHOT

Limitation: Specific architecture and initial operating conditions required for device EQE/lifetime; values are NOT intrinsic photophysical material properties. Device EQEmax @unknown brightness, EQE @1000 cd/m², LT80 @initial1000 cd/m² are different metrics. No statement of industrial readiness from this comparison alone.

PLQY

87%

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, ΦPL^a; N2-saturated toluene 10^-5 mol L^-1

TAU PROMPT PL

5 ns

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τp^a

TAU DELAYED PL

9.3 μs

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τd^a

PLQY

85%

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1 ΦPL^c; SI p.24 (PDF page25), Supplementary Table 2

TAU PROMPT PL

22.1 ns

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τp (15 wt%, 100 nm)

TAU DELAYED PL

10.9 μs

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τd (15 wt%, 100 nm)

PL PEAK

481 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated λmax

PL FWHM

70 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated FWHM

Device: Source-reported blue TADF OLED using 5tCzBN as emitter; device-specific performance from main Table 2 and 1000 cd/m² operating context

Host: Not reported

Dopant: Not reported

Evidence: SRC-HUANG-2024-NATPHOT

Limitation: Specific architecture and initial operating conditions required for device EQE/lifetime; values are NOT intrinsic photophysical material properties. Device EQEmax @unknown brightness, EQE @1000 cd/m², LT80 @initial1000 cd/m² are different metrics. No statement of industrial readiness from this comparison alone.

PLQY

96%

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, ΦPL^a; N2-saturated toluene 10^-5 mol L^-1

TAU PROMPT PL

5.5 ns

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τp^a

TAU DELAYED PL

9.7 μs

Medium: N2-saturated toluene solution; emitter concentration 10^-5 mol L^-1

Host: Not reported

Temperature: Not reported

Doping: Not reported

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1, τd^a

PLQY

95%

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Table 1 ΦPL^c; SI p.24 (PDF page25), Supplementary Table 2

TAU PROMPT PL

31.6 ns

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τp (15 wt%, 100 nm)

TAU DELAYED PL

11.3 μs

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · SI p.24 (PDF page 25), Supplementary Table 2 τd (15 wt%, 100 nm)

PL PEAK

479 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated λmax

PL FWHM

66 nm

Medium: 100 nm co-doped film; 15 wt% emitter in SiCzCz/SiTrzCz2 (55:30 wt% reported host components)

Host: SiCzCz / SiTrzCz2

Temperature: Not reported

Doping: 15 wt% (fraction of total 100 nm emissive film; 55 wt% SiCzCz + 30 wt% SiTrzCz2)

Evidence: SRC-HUANG-2024-NATPHOT · Main article p. 519 (PDF page 4), Figure 2c/d, annotated FWHM

Device: Source-reported blue TADF OLED using D-5tCzBN as emitter; device-specific performance from main Table 2 and 1000 cd/m² operating context

Host: Not reported

Dopant: Not reported

Evidence: SRC-HUANG-2024-NATPHOT

Limitation: Specific architecture and initial operating conditions required for device EQE/lifetime; values are NOT intrinsic photophysical material properties. Device EQEmax @unknown brightness, EQE @1000 cd/m², LT80 @initial1000 cd/m² are different metrics. No statement of industrial readiness from this comparison alone.

PLQY

30.7%

Medium: 10 wt% ACRSA in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₃: ACRSA, PLQY 30.7%, 10 wt% in mCBPCN

TAU PROMPT PL

3.22 × 10^⁻⁷ s

Medium: 10 wt% ACRSA in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₈, Table S₄: ACRSA:mCBPCN τPF 3.22 × 10^⁻⁰⁷ s

TAU DELAYED PL

0.0000079 s

Medium: 10 wt% ACRSA in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₈, Table S₄: ACRSA:mCBPCN τDF 7.90 × 10^⁻⁰⁶ s

Device: As a 10 wt% mCBPCN TADF sensitizer with 1 wt% ν-DABNA terminal emitter, main article Fig. 4f reports HF EQEmax 28.5% vs ~11% ACRSA-only (approximate benchmark).

Host: Not reported

Dopant: Not reported

Evidence: SRC-STAVROU-2024-NATPHOT

Limitation: Applies to a specific sensitizer/terminal-emitter co-doped OLED device, not an isolated molecular photophysical property. Device EQE and lifetime depend on full architecture, luminance and host. Direct claims of commercial readiness are not warranted.

PLQY

98%

Medium: 10 wt% DMAC-TRZ in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: DMAC-TRZ:mCBPCN 98% in N2 (also SI S₇ Table S₃)

PL PEAK

502 nm

Medium: 10 wt% DMAC-TRZ in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: DMAC-TRZ:mCBPCN λmax 502 nm

TAU PROMPT PL

21.66 ns

Medium: 10 wt% DMAC-TRZ in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: DMAC-TRZ:mCBPCN τPF,av 21.66 ns

TAU DELAYED PL

15.5 μs

Medium: 10 wt% DMAC-TRZ in mCBPCN (sensitizer only film); 90 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: DMAC-TRZ:mCBPCN τDF,av 15.5 μs

Device: As a 10 wt% mCBPCN sensitizer with ν-DABNA terminal emitter, source reports limited EQE enhancement relative to strong sensitizer-only OLEDs (main Fig. 4d); not material-intrinsic EQE.

Host: Not reported

Dopant: Not reported

Evidence: SRC-STAVROU-2024-NATPHOT

Limitation: Applies to a specific sensitizer/terminal-emitter co-doped OLED device, not an isolated molecular photophysical property. Device EQE and lifetime depend on full architecture, luminance and host. Direct claims of commercial readiness are not warranted.

PLQY

37.6%

Medium: 10 wt% AZB-TRZ in mCP (sensitizer only film); 90 wt% host

Host: mCP

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: AZB-TRZ:mCP PLQY 37.6%

PL PEAK

495 nm

Medium: 10 wt% AZB-TRZ in mCP (sensitizer only film); 90 wt% host

Host: mCP

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: AZB-TRZ:mCP λmax 495 nm

TAU PROMPT PL

23.88 ns

Medium: 10 wt% AZB-TRZ in mCP (sensitizer only film); 90 wt% host

Host: mCP

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: AZB-TRZ:mCP τPF,av 23.88 ns

TAU DELAYED PL

1.3 μs

Medium: 10 wt% AZB-TRZ in mCP (sensitizer only film); 90 wt% host

Host: mCP

Temperature: Not reported

Doping: 10 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: AZB-TRZ:mCP τDF,av 1.3 μs

Device: As a 10 wt% mCP sensitizer with 1 wt% ν-DABNA terminal emitter, main Fig. 4e reports HF EQEmax about 20% versus about 5% AZB-only.

Host: Not reported

Dopant: Not reported

Evidence: SRC-STAVROU-2024-NATPHOT

Limitation: Applies to a specific sensitizer/terminal-emitter co-doped OLED device, not an isolated molecular photophysical property. Device EQE and lifetime depend on full architecture, luminance and host. Direct claims of commercial readiness are not warranted.

PLQY

60.9%

Medium: 1 wt% ν-DABNA in mCBPCN (terminal emitter only film); 99 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: ν-DABNA:mCBPCN ΦPL 60.9%

PL PEAK

477 nm

Medium: 1 wt% ν-DABNA in mCBPCN (terminal emitter only film); 99 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: ν-DABNA:mCBPCN λmax 477 nm

TAU PROMPT PL

3.5 ns

Medium: 1 wt% ν-DABNA in mCBPCN (terminal emitter only film); 99 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: ν-DABNA:mCBPCN τPF 3.5 ns

TAU DELAYED PL

4.6 μs

Medium: 1 wt% ν-DABNA in mCBPCN (terminal emitter only film); 99 wt% host

Host: mCBPCN

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₅, Table S₁: ν-DABNA:mCBPCN τDF,av 4.6 μs

PLQY

29%

Medium: 1 wt% ν-DABNA in mCP (terminal emitter only film); 99 wt% host

Host: mCP

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: ν-DABNA:mCP ΦPL 29%

PL PEAK

476 nm

Medium: 1 wt% ν-DABNA in mCP (terminal emitter only film); 99 wt% host

Host: mCP

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: ν-DABNA:mCP λmax 476 nm

TAU PROMPT PL

3.5 ns

Medium: 1 wt% ν-DABNA in mCP (terminal emitter only film); 99 wt% host

Host: mCP

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: ν-DABNA:mCP τPF 3.5 ns

TAU DELAYED PL

4.6 μs

Medium: 1 wt% ν-DABNA in mCP (terminal emitter only film); 99 wt% host

Host: mCP

Temperature: Not reported

Doping: 1 wt% (sensitizer or terminal-emitter wt% of overall film; remainder host)

Evidence: SRC-STAVROU-2024-NATPHOT · Official SI printed S₇, Table S₂: ν-DABNA:mCP τDF,av 4.6 μs

Device: This is the 1 wt% terminal emitter in hyperfluorescence systems; source-linked system device metrics depend on particular ACRSA/DMAC-TRZ/AZB-TRZ sensitizer, host and full stack.

Host: Not reported

Dopant: Not reported

Evidence: SRC-STAVROU-2024-NATPHOT

Limitation: Applies to a specific sensitizer/terminal-emitter co-doped OLED device, not an isolated molecular photophysical property. Device EQE and lifetime depend on full architecture, luminance and host. Direct claims of commercial readiness are not warranted.